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TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and SentaurusSimulación TCAD para un MOSFET de silicio en aislante, ultra fino con óxido enterrado y completamente agotado: una comparación entre COMSOL y Sentaurus
(USFQ PRESS, departamento editorial de la Universidad San Francisco de Quito USFQ, 2014)
Total ionizing dose influence on proton irradiated triple gate SOI tunnel FETs
(2018-10-05)
This paper reports an analysis of radiation ef-fects on triple gate SOI tunnel FETs from a total ionizing dose point of view, based on measurements and TCAD simu-lations. Devices with different dimensions were exposed to ...
Design of High-Efficiency GaAs Solar Cells Based on TCAD 2D Numerical Simulations
(Universidad Tecnológica de Panamá, 2018)
Design of High-Efficiency GaAs Solar Cells Based on TCAD 2D Numerical Simulations
(Universidad Tecnológica de Panamá, 2018)
Diseño y simulación TCAD de un OTA ULV/P
(Quito, 2020)
10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells
(Elsevier Science, 2017-01)
In this paper, the experimental results of a 10 MeV proton irradiation on concentrator GaInP/GaAs/Ge lattice-matched triple-junction solar cells and their corresponding subcells are examined. Electro-optical characterization ...
TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells
(Universidad Tecnológica de Panamá, Panamá, 2018)