Artículos de revistas
The Bulk Band Structure and Inner Potential of Layered In4Se3
Fecha
2008-12Registro en:
Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; et al.; The Bulk Band Structure and Inner Potential of Layered In4Se3; Elsevier Science; Applied Surface Science; 254; 12-2008; 4322-4325
0169-4332
CONICET Digital
CONICET
Autor
Liu, J.
Losovyj, Y. B.
Komesu, T.
Dowben, P.A.
Makinistian, Leonardo
Albanesi, Eduardo Aldo
Petukhov, A.G.
Galiy, P.
Fiyala, Y.
Resumen
The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.