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Cálculo del parámetro de red del Sistema A1Zr-B2 en la estructura BCC utilizando el método FP-LAPW

Ramos Alvarado, Juan Alex (Universidad Nacional del CallaoPE, 2013)

Para este estudio consideramos al sistema A1Zr-B2 en la estructura cúbica de cuerpo centrado BCC y, por la minimización de la energía total, obtenemos el correspondiente parámetro de red. Finalmente, los cálculos de energía ...

Cálculo del parámetro de red del Sistema A1Zr-B2 en la estructura BCC utilizando el método FP-LAPW

Ramos Alvarado, Juan Alex (Universidad Nacional del CallaoPE, 2013)

FP-LAPW Study of the EFG at Impurity Sites in Oxides: Cd in Rutile TiO2

Errico, Leonardo Antonio; Fabricius, Gabriel; Rentería, Mario (2000)

Erratum

Errico, Leonardo Antonio; Fabricius, Gabriel; Rentería, Mario (Verlag der Zeitschrift für Naturforschung, 2000-01)

Erratum del artículo publicado en Zeitschrift für Naturforschung A 55, 267 (2000).

First principles calculations of hyperfine magnetic field in RECd compounds (RE=Ce,Gd and Er) using FP-LAPW ELK codeC??lculos por primeiros princ??pios do campo hiperfino magn??tico em compostos TRCd (TR = Ce, Gd and Er) usando o c??digo FP-LAPW ELK

MACIEL, LEVY S. (2020)

The Bulk Band Structure and Inner Potential of Layered In4Se3

Liu, J.; Losovyj, Y. B.; Komesu, T.; Dowben, P.A.; Makinistian, Leonardo; Albanesi, Eduardo Aldo; Petukhov, A.G.; Galiy, P.; Fiyala, Y. (Elsevier Science, 2008-12)

The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for ...

FP-LAPW calculations of the EFG at Cd Impurities in rutile SnO2

Errico, Leonardo Antonio; Fabricius, Gabriel; Rentería, Mario (Kluwer Academic/Plenum Publ, 2001-11)

We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO2 (rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW ...

Thermodynamic and optoelectronic properties of GaAs(1−x) Mx(M = Fe,Cu) ternary compounds via first principles

Gonzales-Ormeño, Pablo G.; Mendoza, Miguel A.; Schön, Cláudio G. (Elsevier Ltd, 2022-06-01)

The electronic structure, band structure and optical properties of compounds GaAs(1−x)Mx (M = Fe,Cu), for x=0.25, 0.75, and 1 are discussed via Full-potential linearized augmented plane wave calculations. An increase in ...

AB-INITIO studies of the structural and electronic properties of vanadium nitrideEstudios AB-INITIO de las propiedades estructurales y electrónicas del nitruro de vanadio

González Hernandez, Rafael Julián; Rodríguez Mártinez, Jairo Arbey; López Pérez, William Rafael (Universidad Militar Nueva Granada, 2007)

Structural and electronic properties of RuN/GaN superlattices: a first-principles studyStructural and electronic properties of RuN/GaN superlattices: a first-principles study

Ortega López, C.; González Hernández, R.; Arbey Rodríguez, J. (Revista Mexicana de Física, 2012)

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Cálculo del parámetro de red del Sistema A1Zr-B2 en la estructura BCC utilizando el método FP-LAPW

Cálculo del parámetro de red del Sistema A1Zr-B2 en la estructura BCC utilizando el método FP-LAPW

FP-LAPW Study of the EFG at Impurity Sites in Oxides: Cd in Rutile TiO2

Erratum

First principles calculations of hyperfine magnetic field in RECd compounds (RE=Ce,Gd and Er) using FP-LAPW ELK codeC??lculos por primeiros princ??pios do campo hiperfino magn??tico em compostos TRCd (TR = Ce, Gd and Er) usando o c??digo FP-LAPW ELK

The Bulk Band Structure and Inner Potential of Layered In4Se3

FP-LAPW calculations of the EFG at Cd Impurities in rutile SnO2

Thermodynamic and optoelectronic properties of GaAs(1−x) Mx(M = Fe,Cu) ternary compounds via first principles

AB-INITIO studies of the structural and electronic properties of vanadium nitrideEstudios AB-INITIO de las propiedades estructurales y electrónicas del nitruro de vanadio

Structural and electronic properties of RuN/GaN superlattices: a first-principles studyStructural and electronic properties of RuN/GaN superlattices: a first-principles study