A model for non-volatile electronic memory devices with strongly correlated materials

dc.creatorRozenberg, Marcelo Javier
dc.creatorInoue, I.H.
dc.creatorGranados Sanchez, Maria Jimena
dc.date2005-12
dc.identifierhttp://hdl.handle.net/11336/61192
dc.identifierRozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27
dc.identifier0040-6090
dc.identifierCONICET Digital
dc.identifierCONICET
dc.descriptionThe behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.
dc.descriptionFil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
dc.descriptionFil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos
dc.descriptionFil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
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dc.formatapplication/pdf
dc.formatapplication/pdf
dc.languageeng
dc.publisherElsevier Science Sa
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2004.10.059
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.subjectNon-Volatile Memory
dc.subjectResistance Switching
dc.subjecthttps://purl.org/becyt/ford/1.3
dc.subjecthttps://purl.org/becyt/ford/1
dc.titleA model for non-volatile electronic memory devices with strongly correlated materials
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion


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