Mismatch of lateral field metal-oxide-metal capacitors in 180 nm cmos process

dc.date.accessioned2016-11-29T20:29:45Z
dc.date.available2016-11-29T20:29:45Z
dc.date.created2016-11-29T20:29:45Z
dc.date.issued2012
dc.identifier0013-5194
dc.identifierhttp://hdl.handle.net/10533/132395
dc.identifier11110165
dc.identifierWOS:000300881100026
dc.languageeng
dc.publisherINST ENGINEERING TECHNOLOGY-IET
dc.relationhttps://doi.org/10.1049/el.2011.3804
dc.relation10.1049/el.2011.3804
dc.relationinfo:eu-repo/grantAgreement/Fondecyt/11110165
dc.relationinfo:eu-repo/semantics/dataset/hdl.handle.net/10533/93477
dc.relationinstname: Conicyt
dc.relationreponame: Repositorio Digital RI2.0
dc.relationinstname: Conicyt
dc.relationreponame: Repositorio Digital RI2.0
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleMismatch of lateral field metal-oxide-metal capacitors in 180 nm cmos process
dc.typeArticulo


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