Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Electromigration damage in interconnects is a well-known bottleneck of integrated circuits, as it is responsible for performance degradation, affecting parameters like delay, power and frequency. To guarantee a better performance for longer time, the chip designer needs to identify critical wires in the circuit layout and to alter it using techniques that retard the electromigration impact on the circuit. In this work, it is proposed a methodology to identify the critical lines due to the electromigration effect. This methodology is applied to evaluate the performance degradation of a ring oscillator.Brazilian agency CAPESCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)31st Symposium on Microelectronics Technology and Devices (SBMicro)AUG 29-SEP 03, 2016Belo Horizonte, BRAZIL