Artículos de revistas
Chemical Vapor Deposition Of Monolayer Rhenium Disulfide (res2).
Registration in:
Advanced Materials (deerfield Beach, Fla.). v. 27, n. 31, p. 4640-4648, 2015-Aug.
1521-4095
10.1002/adma.201501795
26140355
Author
Keyshar, Kunttal
Gong, Yongji
Ye, Gonglan
Brunetto, Gustavo
Zhou, Wu
Cole, Daniel P
Hackenberg, Ken
He, Yongmin
Machado, Leonardo
Kabbani, Mohamad
Hart, Amelia H C
Li, Bo
Galvao, Douglas S
George, Antony
Vajtai, Robert
Tiwary, Chandra Sekhar
Ajayan, Pulickel M
Institutions
Abstract
The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor. 27 4640-4648