Chemical Vapor Deposition Of Monolayer Rhenium Disulfide (res2).

dc.creatorKeyshar, Kunttal
dc.creatorGong, Yongji
dc.creatorYe, Gonglan
dc.creatorBrunetto, Gustavo
dc.creatorZhou, Wu
dc.creatorCole, Daniel P
dc.creatorHackenberg, Ken
dc.creatorHe, Yongmin
dc.creatorMachado, Leonardo
dc.creatorKabbani, Mohamad
dc.creatorHart, Amelia H C
dc.creatorLi, Bo
dc.creatorGalvao, Douglas S
dc.creatorGeorge, Antony
dc.creatorVajtai, Robert
dc.creatorTiwary, Chandra Sekhar
dc.creatorAjayan, Pulickel M
dc.date2015-Aug
dc.date2016-05-23T19:41:55Z
dc.date2016-05-23T19:41:55Z
dc.date.accessioned2018-03-29T01:29:19Z
dc.date.available2018-03-29T01:29:19Z
dc.identifierAdvanced Materials (deerfield Beach, Fla.). v. 27, n. 31, p. 4640-4648, 2015-Aug.
dc.identifier1521-4095
dc.identifier10.1002/adma.201501795
dc.identifierhttp://www.ncbi.nlm.nih.gov/pubmed/26140355
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/235640
dc.identifier26140355
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1303883
dc.descriptionThe direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.
dc.description27
dc.description4640-4648
dc.languageeng
dc.relationAdvanced Materials (deerfield Beach, Fla.)
dc.relationAdv. Mater. Weinheim
dc.rightsfechado
dc.sourcePubMed
dc.subject2d Materials
dc.subjectChemical Vapor Deposition
dc.subjectRenium Disulfide
dc.subjectTransition Metal Dichalcogenides
dc.titleChemical Vapor Deposition Of Monolayer Rhenium Disulfide (res2).
dc.typeArtículos de revistas


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