| dc.creator | RODRIGUES, PAM | |
| dc.creator | CERDEIRA, F | |
| dc.creator | BEAN, JC | |
| dc.date | 1992 | |
| dc.date | DEC 15 | |
| dc.date | 2014-12-16T11:34:06Z | |
| dc.date | 2015-11-26T17:57:35Z | |
| dc.date | 2014-12-16T11:34:06Z | |
| dc.date | 2015-11-26T17:57:35Z | |
| dc.date.accessioned | 2018-03-29T00:41:08Z | |
| dc.date.available | 2018-03-29T00:41:08Z | |
| dc.identifier | Physical Review B. American Physical Soc, v. 46, n. 23, n. 15263, n. 15269, 1992. | |
| dc.identifier | 0163-1829 | |
| dc.identifier | WOS:A1992KG30600035 | |
| dc.identifier | 10.1103/PhysRevB.46.15263 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/59675 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/59675 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/59675 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1291522 | |
| dc.description | We report low-temperature (77 K) photoreflectance measurements in two Ge/Ge0.7Si0.3 strained-layer superlattices, in the photon energy range 0.8-1.8 eV. The multiple lines observed in our spectra in this energy region can be consistently explained in terms of quantum confinement of zone-center bulk Ge states. Quantitative agreement is obtained when energy-dependent masses are used for the electrons and light-hole states within a scalar three-band model. This interpretation leads to values of the average valence-band offsets in good agreement with previous ab initio theoretical calculations. | |
| dc.description | 46 | |
| dc.description | 23 | |
| dc.description | 15263 | |
| dc.description | 15269 | |
| dc.language | en | |
| dc.publisher | American Physical Soc | |
| dc.publisher | College Pk | |
| dc.publisher | EUA | |
| dc.relation | Physical Review B | |
| dc.relation | Phys. Rev. B | |
| dc.rights | aberto | |
| dc.source | Web of Science | |
| dc.subject | Semiconductor Quantum Wells | |
| dc.subject | Valence-band Offsets | |
| dc.subject | Electronic-structure | |
| dc.subject | 001 Ge | |
| dc.subject | Heterostructures | |
| dc.subject | Si | |
| dc.subject | Spectroscopy | |
| dc.subject | States | |
| dc.subject | Gaas | |
| dc.subject | Nonparabolicity | |
| dc.title | PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES | |
| dc.type | Artículos de revistas | |
