We present a study on the growth of lattice-matched InGaP on patterned GaAs substrates by chemical beam epitaxy. An experimental analysis of the growth on planes [100] and [111]A as a function of growth temperature and pattern dimension is presented. A simple surface kinetics model is proposed allowing the determination of diffusion length, incorporation time and free species lifetime on both planes. Incorporation on planes [111]A reduces with increase in temperature and there is indication of a relationship between evaporation time and nucleation sites on [111]A planes (C) 1998 Elsevier Science B.V. All rights reserved.1934510515