| dc.creator | de Castro, MPP | |
| dc.creator | Frateschi, NC | |
| dc.creator | Bettini, J | |
| dc.creator | de Carvalho, MM | |
| dc.date | 1998 | |
| dc.date | OCT | |
| dc.date | 2014-12-02T16:27:22Z | |
| dc.date | 2015-11-26T17:57:24Z | |
| dc.date | 2014-12-02T16:27:22Z | |
| dc.date | 2015-11-26T17:57:24Z | |
| dc.date.accessioned | 2018-03-29T00:40:57Z | |
| dc.date.available | 2018-03-29T00:40:57Z | |
| dc.identifier | Journal Of Crystal Growth. Elsevier Science Bv, v. 193, n. 4, n. 510, n. 515, 1998. | |
| dc.identifier | 0022-0248 | |
| dc.identifier | WOS:000076725000010 | |
| dc.identifier | 10.1016/S0022-0248(98)00506-5 | |
| dc.identifier | http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/69447 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/69447 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/69447 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1291475 | |
| dc.description | We present a study on the growth of lattice-matched InGaP on patterned GaAs substrates by chemical beam epitaxy. An experimental analysis of the growth on planes [100] and [111]A as a function of growth temperature and pattern dimension is presented. A simple surface kinetics model is proposed allowing the determination of diffusion length, incorporation time and free species lifetime on both planes. Incorporation on planes [111]A reduces with increase in temperature and there is indication of a relationship between evaporation time and nucleation sites on [111]A planes (C) 1998 Elsevier Science B.V. All rights reserved. | |
| dc.description | 193 | |
| dc.description | 4 | |
| dc.description | 510 | |
| dc.description | 515 | |
| dc.language | en | |
| dc.publisher | Elsevier Science Bv | |
| dc.publisher | Amsterdam | |
| dc.publisher | Holanda | |
| dc.relation | Journal Of Crystal Growth | |
| dc.relation | J. Cryst. Growth | |
| dc.rights | fechado | |
| dc.rights | http://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy | |
| dc.source | Web of Science | |
| dc.subject | patterned substrates | |
| dc.subject | InGaP | |
| dc.subject | surface kinetics | |
| dc.subject | migration length | |
| dc.subject | Vapor-deposition | |
| dc.subject | Buried Heterostructure | |
| dc.subject | Lasers | |
| dc.subject | Layers | |
| dc.subject | Gainp | |
| dc.subject | Inp | |
| dc.title | In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy | |
| dc.type | Artículos de revistas | |
