A metal-insulator transition in two-dimensional electron gases at B = 0 is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e(2) and critical carrier densities of 1.2 X 10(11) cm(-2). Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.825996999