Metal-insulator transition in a disordered two-dimensional electron gas in GaAs-AlGaAs at zero magnetic field

dc.creatorRibeiro, E
dc.creatorJaggi, RD
dc.creatorHeinzel, T
dc.creatorEnsslin, K
dc.creatorMedeiros-Ribeiro, G
dc.creatorPetroff, PM
dc.date1999
dc.dateFEB 1
dc.date2014-12-02T16:30:16Z
dc.date2015-11-26T16:44:05Z
dc.date2014-12-02T16:30:16Z
dc.date2015-11-26T16:44:05Z
dc.date.accessioned2018-03-28T23:29:18Z
dc.date.available2018-03-28T23:29:18Z
dc.identifierPhysical Review Letters. American Physical Soc, v. 82, n. 5, n. 996, n. 999, 1999.
dc.identifier0031-9007
dc.identifierWOS:000078412900032
dc.identifier10.1103/PhysRevLett.82.996
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/56579
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/56579
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/56579
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1273799
dc.descriptionA metal-insulator transition in two-dimensional electron gases at B = 0 is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e(2) and critical carrier densities of 1.2 X 10(11) cm(-2). Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
dc.description82
dc.description5
dc.description996
dc.description999
dc.languageen
dc.publisherAmerican Physical Soc
dc.publisherCollege Pk
dc.publisherEUA
dc.relationPhysical Review Letters
dc.relationPhys. Rev. Lett.
dc.rightsaberto
dc.sourceWeb of Science
dc.subject2 Dimensions
dc.subjectQuantum Dots
dc.subject2-dimensional System
dc.subjectTransport-properties
dc.subjectScaling Theory
dc.subjectIngaas
dc.subjectPhase
dc.subjectB=0
dc.titleMetal-insulator transition in a disordered two-dimensional electron gas in GaAs-AlGaAs at zero magnetic field
dc.typeArtículos de revistas


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