Laser interference structuring of a-Ge films on GaAs

dc.creatorSantos, PV
dc.creatorZanatta, AR
dc.creatorJahn, U
dc.creatorTrampert, A
dc.creatorDondeo, F
dc.creatorChambouleyron, I
dc.date2002
dc.date36951
dc.date2014-11-16T22:19:11Z
dc.date2015-11-26T16:25:36Z
dc.date2014-11-16T22:19:11Z
dc.date2015-11-26T16:25:36Z
dc.date.accessioned2018-03-28T23:06:22Z
dc.date.available2018-03-28T23:06:22Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 91, n. 5, n. 2916, n. 2920, 2002.
dc.identifier0021-8979
dc.identifierWOS:000174182400049
dc.identifier10.1063/1.1448674
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/61160
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/61160
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/61160
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1268668
dc.descriptionWe have investigated the laser interference crystallization (LIC) of amorphous germanium films on (100)-oriented GaAs substrates using nanosecond laser pulses. We demonstrate that LIC can produce periodic arrays of epitaxially crystallized Ge lines on GaAs with submicrometer widths. The gratings display a surface undulation with faceted surfaces, which depends on laser fluency. The undulation is attributed to the lateral solidification process induced by the temperature gradients created during the LIC process. (C) 2002 American Institute of Physics.
dc.description91
dc.description5
dc.description2916
dc.description2920
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectLateral Grain-growth
dc.subjectSilicon Thin-films
dc.subjectAmorphous-germanium
dc.subjectCrystallization
dc.subjectSi
dc.titleLaser interference structuring of a-Ge films on GaAs
dc.typeArtículos de revistas


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