This work presents a technique for temperature compensation of Silicon Piezoresistive Pressure Sensors (PPSs) based on a Proportional to Absolute Temperature (PTAT) Bias-Current circuit (I PTAT). This technique is applied on the Multi-Stage Current-Mode Piezoresistive Pressure Sensor based on a 3-Terminal Pressure Sensor (3-TPS) that recently has been being studied as an alternative to the conventional Wheatstone Bridge and Transversal PPSs. The experimental maximum differential sensitivity of the sensor output current relative change, for 500μA constant bias current, amounts to 0.64%/psi @20°C. The sensor output current sensitivity temperature dependence, without compensation, amounts to 0.06μA/°C over a range from 20°C to 80°C. After compensation, the experimental results show a maximum deviation of 1.5% within the full scale output span. This efficient compensation was achieved using a PTAT bias current whose Temperature Coefficient (TC) amounts to 0.06μA/°C. © 2011 IEEE. 15261529IEEE SENSORS CouncilGridchin, A.V., A three-terminal silicon piezotransducer: General consideration and estimation of sensitivity (2003) Electron Devices and Materials, 4th Annual 2003 Siberian Russian Workshop, pp. 58-63Gowrishetty, U., Single element 3-terminal pressure sensors: A new approach to pressure sensing and its comparison to the half bridge sensors (2009) Solid-State Sensors, Transducers 2009, pp. 1134-1137Popovic, R.S., (1991) Hall Effect Devices: Magnetic Sensors and Characterization of Semiconductors, , Adam Hilger, UKCoraucci, G., Fruett, F., Silicon multi-stage current-mode piezoresistive pressure sensor (2010) Solid-State Sensors, IEEE Sensors 2010, pp. 1770-1774Kanda, Y., Piezoresistance Effect of Silicon (1991) Sensors and Actuators A, 28, pp. 83-91(2004) Temperature Compensation Methods for the Motorola X-ducer Pressure Sensor Element, , Freescale Semicondutors, Application Note-AN840(2005) Dynamic Temperature Compensation for Pressure Sensors, , Intersil Application Note - AN168Akbar, M., A fully integrated temperature compensation technique for piezoresistive pressure sensors (1993) IEEE Transactions on Intrumentation and Measurement, 42 (3), pp. 771-775Aljancic, U., Temperature effects modeling in silicon piezoresistive pressure sensor (2002) IEEE Melecon, pp. 36-40Fruett, F., Meijer, G.C.M., (2002) The Piezojunction Effect in Silicon Integrated Circuits and Sensors, , Kluwer Academic Publishers, BostonGray, P.R., (2001) Analysis and Design of Analog Integrated Circuits, , John Wiley and Sons Inc, USACoraucci, G.O., Fruett, F., Study, design and microfabrication of a new CMOS compatible multi-terminal pressure sensor with enhanced sensitivity (2010) Sensors and Actuators A