In this work, TiO2-MoO3 films were easily prepared by dip-coating technique and metallo-organic decomposition process (MOD). Raman analyses indicate the formation of TiO2 in anatase phase and orthorhombic phase of α-MoO3. It was observed that the Raman bands intensities attributed to TiO2 and MoO3 oxides were dependent on the number of decomposition-deposition cycles (DDC). The different number of DDC generates films with different thicknesses and the Raman signal was sensitive to this variation. Raman analyses provided qualitative information about the bilayer structure of the bi-component TiO2-MoO3 films, which was confirmed by scanning electron microscopy. In this direction, the dip-coating technique and MOD process can be an efficient strategy to facile preparation of many samples to be used in applications. © 2014 Elsevier Ltd.60 e242e246Lamic-Humblot, A.F., Barthe, P., Guzman, G., Delannoy, L., Louis, C., (2013) Thin Solid Films, 527, p. 96Zhao, Y., Yang, B., Xu, J., Fu, Z., Wu, M., Li, F., (2012) Thin Solid Films, 520, p. 3515Martínez, H.M., Torres, J., Rodríguez-García, M.E., Carreño, L.D.L., (2012) Phys. B Con. Matter, 407, p. 3199Hsu, C.S., Chan, C.C., Huang, H.T., Peng, C.H., Hsu, W.C., (2010) Thin Solid Films, 516, p. 4839Vomiero, A., Della Mea, D., Ferroni, M., Martinelli, G., Roncarati, G., Guidi, V., Comini, E., Sberveglieri, G., (2003) Mater. Sci. Eng. B, 101, p. 216Tucker, R.T., Beckers, N.A., Fleischauer, M.D., Brett, M.J., (2012) Thin Solid Films, 525, p. 28Khan, T.M., Mehmood, M.F., Mahmood, A., Shah, A., Raza, Q., Iqbal, A., Aziz, U., (2011) Thin Solid Films, 519, p. 5971Ronconi, C.M., Alves, O.L., Bruns, R.E., (2009) Thin Solid Films, 517, p. 2886Santos, E.B., Silva, J.M.S., Mazali, I.O., (2010) Vib. Spectrosc., 54, p. 89Santos, E.B., Sigoli, F.A., Mazali, I.O., (2012) J. Solid State Chem., 190, p. 80Li, Y., Galatsis, K., Wlodarski, W., Ghantasala, M., Russo, S., Gorman, J., Santucci, S., Passacantando, M., (2011) J. Vac. Sci. Technol. A, 19, p. 904Huang, Y., Li, D., Feng, J., Li, G., Zhang, Q., (2010) J. Sol-Gel Sci. Technol., 54, p. 276Al-Kandari, H., Al-Kharafi, F., Al-Awadi, N., El-Dusouqui, O.M., Katrib, A., (2006) J. Electron. Spectrosc. Relat. Phenom., 151, p. 128Barnabé, A., Chapelle, A., Presmanes, L., Tailhades, P., (2013) J. Mater. Sci., 48, p. 3386Cole, I.S., Muster, T.H., Lau, D., Wright, N., Asmat, N.S., (2010) J. Electrochem. Soc., 157, p. 213Corrêa, D.N., Silva, J.M.S., Santos, E.B., Sigoli, F.A., Souza Filho, A.G., Mazali, I.O., (2011) J. Phys. Chem. C, 115, p. 10380Ghimbeu, C.M., Lumbreras, M., Schoonman, J., Siadat, M., (2009) Sensors, 9, p. 9122Li, L., Mizuhata, M., Deki, S., (2005) Appl. Surf. Sci., 239, p. 292Mazali, I.O., Souza Filho, A.G., Viana Neto, B.C., Mendes Filho, J., Alves, O.L., (2006) J. Nanopart. Res., 8, p. 141Lee, Y.J., Seo, Y.I., Kim, S.H., Kim, D.G., Kim, Y.D., (2009) Appl. Phys. A - Mater., 97, p. 237Georgescu, D., Baia, L., Ersen, O., Baia, M., Simon, S., (2012) J. Raman Spectrosc., 43, p. 876Yao, D.D., Ou, J.Z., Latham, K., Zhuiykov, S., O'Mullane, A.P., Kalantar-Zadeh, K., (2012) Cryst. Growth Des., 12, p. 1865Atuchin, V.V., Gavrilova, T.A., Grigorieva, T.I., Kuratieva, N.V., Okotrub, K.A., Pervukhina, N.V., Surovtsev, N.V., (2011) J. Cryst. Growth, 318, p. 987Santos, E.B., Silva, J.M.S., Mazali, I.O., (2010) Mater. Res. Bull., 45, p. 1707He, T., Yao, J., (2006) Prog. Mater. Sci., 51, p. 810Huang, H., Chen, G., Wang, S., Kang, L., Lin, Z., Zhang, Y., (2014) Mater. Res. Bull., 51, p. 455