dc.creatorSantos E.D.B.
dc.creatorSigoli F.A.
dc.creatorMazali I.O.
dc.date2014
dc.date2015-06-25T17:57:06Z
dc.date2015-11-26T14:49:12Z
dc.date2015-06-25T17:57:06Z
dc.date2015-11-26T14:49:12Z
dc.date.accessioned2018-03-28T22:00:08Z
dc.date.available2018-03-28T22:00:08Z
dc.identifier
dc.identifierMaterials Research Bulletin. Elsevier Ltd, v. 60, n. , p. e242 - e246, 2014.
dc.identifier255408
dc.identifier10.1016/j.materresbull.2014.08.044
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84907160856&partnerID=40&md5=c5254e42d9e64687061467116f64b973
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/87185
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/87185
dc.identifier2-s2.0-84907160856
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1253827
dc.descriptionIn this work, TiO2-MoO3 films were easily prepared by dip-coating technique and metallo-organic decomposition process (MOD). Raman analyses indicate the formation of TiO2 in anatase phase and orthorhombic phase of α-MoO3. It was observed that the Raman bands intensities attributed to TiO2 and MoO3 oxides were dependent on the number of decomposition-deposition cycles (DDC). The different number of DDC generates films with different thicknesses and the Raman signal was sensitive to this variation. Raman analyses provided qualitative information about the bilayer structure of the bi-component TiO2-MoO3 films, which was confirmed by scanning electron microscopy. In this direction, the dip-coating technique and MOD process can be an efficient strategy to facile preparation of many samples to be used in applications. © 2014 Elsevier Ltd.
dc.description60
dc.description
dc.descriptione242
dc.descriptione246
dc.descriptionLamic-Humblot, A.F., Barthe, P., Guzman, G., Delannoy, L., Louis, C., (2013) Thin Solid Films, 527, p. 96
dc.descriptionZhao, Y., Yang, B., Xu, J., Fu, Z., Wu, M., Li, F., (2012) Thin Solid Films, 520, p. 3515
dc.descriptionMartínez, H.M., Torres, J., Rodríguez-García, M.E., Carreño, L.D.L., (2012) Phys. B Con. Matter, 407, p. 3199
dc.descriptionHsu, C.S., Chan, C.C., Huang, H.T., Peng, C.H., Hsu, W.C., (2010) Thin Solid Films, 516, p. 4839
dc.descriptionVomiero, A., Della Mea, D., Ferroni, M., Martinelli, G., Roncarati, G., Guidi, V., Comini, E., Sberveglieri, G., (2003) Mater. Sci. Eng. B, 101, p. 216
dc.descriptionTucker, R.T., Beckers, N.A., Fleischauer, M.D., Brett, M.J., (2012) Thin Solid Films, 525, p. 28
dc.descriptionKhan, T.M., Mehmood, M.F., Mahmood, A., Shah, A., Raza, Q., Iqbal, A., Aziz, U., (2011) Thin Solid Films, 519, p. 5971
dc.descriptionRonconi, C.M., Alves, O.L., Bruns, R.E., (2009) Thin Solid Films, 517, p. 2886
dc.descriptionSantos, E.B., Silva, J.M.S., Mazali, I.O., (2010) Vib. Spectrosc., 54, p. 89
dc.descriptionSantos, E.B., Sigoli, F.A., Mazali, I.O., (2012) J. Solid State Chem., 190, p. 80
dc.descriptionLi, Y., Galatsis, K., Wlodarski, W., Ghantasala, M., Russo, S., Gorman, J., Santucci, S., Passacantando, M., (2011) J. Vac. Sci. Technol. A, 19, p. 904
dc.descriptionHuang, Y., Li, D., Feng, J., Li, G., Zhang, Q., (2010) J. Sol-Gel Sci. Technol., 54, p. 276
dc.descriptionAl-Kandari, H., Al-Kharafi, F., Al-Awadi, N., El-Dusouqui, O.M., Katrib, A., (2006) J. Electron. Spectrosc. Relat. Phenom., 151, p. 128
dc.descriptionBarnabé, A., Chapelle, A., Presmanes, L., Tailhades, P., (2013) J. Mater. Sci., 48, p. 3386
dc.descriptionCole, I.S., Muster, T.H., Lau, D., Wright, N., Asmat, N.S., (2010) J. Electrochem. Soc., 157, p. 213
dc.descriptionCorrêa, D.N., Silva, J.M.S., Santos, E.B., Sigoli, F.A., Souza Filho, A.G., Mazali, I.O., (2011) J. Phys. Chem. C, 115, p. 10380
dc.descriptionGhimbeu, C.M., Lumbreras, M., Schoonman, J., Siadat, M., (2009) Sensors, 9, p. 9122
dc.descriptionLi, L., Mizuhata, M., Deki, S., (2005) Appl. Surf. Sci., 239, p. 292
dc.descriptionMazali, I.O., Souza Filho, A.G., Viana Neto, B.C., Mendes Filho, J., Alves, O.L., (2006) J. Nanopart. Res., 8, p. 141
dc.descriptionLee, Y.J., Seo, Y.I., Kim, S.H., Kim, D.G., Kim, Y.D., (2009) Appl. Phys. A - Mater., 97, p. 237
dc.descriptionGeorgescu, D., Baia, L., Ersen, O., Baia, M., Simon, S., (2012) J. Raman Spectrosc., 43, p. 876
dc.descriptionYao, D.D., Ou, J.Z., Latham, K., Zhuiykov, S., O'Mullane, A.P., Kalantar-Zadeh, K., (2012) Cryst. Growth Des., 12, p. 1865
dc.descriptionAtuchin, V.V., Gavrilova, T.A., Grigorieva, T.I., Kuratieva, N.V., Okotrub, K.A., Pervukhina, N.V., Surovtsev, N.V., (2011) J. Cryst. Growth, 318, p. 987
dc.descriptionSantos, E.B., Silva, J.M.S., Mazali, I.O., (2010) Mater. Res. Bull., 45, p. 1707
dc.descriptionHe, T., Yao, J., (2006) Prog. Mater. Sci., 51, p. 810
dc.descriptionHuang, H., Chen, G., Wang, S., Kang, L., Lin, Z., Zhang, Y., (2014) Mater. Res. Bull., 51, p. 455
dc.languageen
dc.publisherElsevier Ltd
dc.relationMaterials Research Bulletin
dc.rightsfechado
dc.sourceScopus
dc.titleStudy Of Structure Of The Tio2-moo3 Bilayer Films By Raman Spectroscopy
dc.typeArtículos de revistas


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