Artículos de revistas
Real-time Optical Diagnostics For Measuring And Controlling Epitaxial Growth
Registro en:
Thin Solid Films. , v. 225, n. 01/02/15, p. 26 - 31, 1993.
406090
10.1016/0040-6090(93)90121-5
2-s2.0-0005286988
Autor
Aspnes D.E.
Kamiya I.
Tanaka H.
Bhat R.
Florez L.T.
Harbison J.P.
Quinn W.E.
Tamargo M.
Gregory S.
Pudensi M.A.A.
Schwarz S.A.
Brasil M.J.S.P.
Nahory R.E.
Institución
Resumen
We summarize recent applications of two real-time optical diagnostic techniques, reflectance difference spectroscopy (RDS) and spectroellipsometry (SE), to epitaxial growth on GaAs and atomic layer epitaxy (ALE) in particular. Using RDS, we obtain the first real-time spectroscopic data of the evolution of the (001) GaAs surface to cyclic and non-cycle exposures of atmospheric pressure H2, H2 and trimethylgallium, and H2 and arsine, which simulate growth by ALE. None of our observations is consistent with any previously proposed simple model, emphasizing the necessity of real-time measurements for the analysis of complex surface reactions. Using SE we have constructed a closed-loop system for controlling the compositions of AlxGa1-xAs layers grown by chemical beam epitaxy. We have produced various graded-compositional structures, including parabolic quantum wells 200 Å wide where the composition was controlled by analysis of the running outermost 3 Å (about 1 monolayer) of depositing material. © 1993. 225 01/02/15 26 31 Goodman, Pessa, (1986) J. Appl. Phys., 60, p. R65. , and references cited therein Ozeki, Ohtsuka, Sakuma, Kodama, (1991) J. Cryst. Growth, 107, p. 102 Ozeki, Mochizuki, Ohtsuka, Kodama, (1988) Appl. Phys. Lett., 53, p. 1509 Nishizawa, Kurabayashi, Abe, Sakurai, Gallium arsenide thin films by low-temperature photochemical processes (1987) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 5, p. 1572 Yu, Buchan, Souda, Kuech, Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs (1991) MRS Proceedings, 222, p. 3 Creighton, Banse, The Surface Chemistry of GaAs Atomic Layer Epitaxy (1991) MRS Proceedings, 222, p. 15 Aspnes, Harbison, Studna, Florez, (1987) Phys. Rev. Lett., 59, p. 1687 Aspnes, Harbison, Studna, Florez, Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs (1988) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 6, p. 1327 Kobayashi, Horikoshi, (1989) Jpn. J. Appl. Phys., 28, p. L1880 Kobayashi, Horikoshi, Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption (1991) Japanese Journal of Applied Physics, 30, p. L319 Aspnes, Quinn, Gregory, (1990) Appl. Phys. Lett., 57, p. 2707 Aspnes, Quinn, Tamargo, Pudensi, Schwarz, Brasil, Nahory, Gregory, (1992) Appl. Phys. Lett., 60, p. 1244 Aspnes, Kamiya, Tanaka, Bhat, Atomic layer epitaxy on (001) GaAs: Real-time spectroscopy (1992) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10, p. 1725 Kamiya, Aspnes, Tanaka, Florez, Harbison, Bhat, (1992) Phys. Rev. Lett., 68, p. 627 Kamiya, Aspnes, Florez, Harbison, (1992) Phys. Rev. B, 46, p. 15894 Gomyo, Suzuki, Iijima, (1988) Phys. Rev. Lett., 60, p. 2645 Froyen, Zunger, (1991) Phys. Rev. Lett., 59, p. 324 Chen, Stringfellow, (1991) Appl. Phys. Lett., 59, p. 324 Chiu, (1989) Appl. Phys. Lett., 55, p. 1244 Creighton, (1990) Surf. Sci., 234, p. 287 Memmert, Yu, (1990) Appl. Phys. Lett., 56, p. 1883 Aspnes, Colas, Studna, Bhat, Koza, Keramidas, (1988) Phys. Rev. Lett., 61, p. 2782 Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs (1989) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 7, p. 711 Farrell, Harbison, Peterson, Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces (1987) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5, p. 1482 Annapragada, Salim, Jensen, Ftir Studies Of Organometallic Surface Chemistry Relevant To Atomic Layer Epitaxy. (1991) MRS Proceedings, 222, p. 81 Studna, Aspnes, Florez, Wilkens, Ryan, Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuum (1989) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 7, p. 3291 Aspnes, Studna, (1975) Appl. Opt., 14, p. 220 (1978) Rev. Sci. Instrum., 49, p. 291 Aspnes, Bhat, Colas, Florez, Gregory, Harbison, Kamiya, Wassermeier, Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth (1991) MRS Proceedings, 222, p. 63. , 2nd edn