| dc.creator | Mestanza S.N.M. | |
| dc.creator | Jimenez H.G. | |
| dc.creator | IFSilva | |
| dc.creator | Diniz J.A. | |
| dc.creator | Doi I. | |
| dc.creator | Swart J.W. | |
| dc.date | 2004 | |
| dc.date | 2015-06-26T14:24:44Z | |
| dc.date | 2015-11-26T14:14:07Z | |
| dc.date | 2015-06-26T14:24:44Z | |
| dc.date | 2015-11-26T14:14:07Z | |
| dc.date.accessioned | 2018-03-28T21:14:57Z | |
| dc.date.available | 2018-03-28T21:14:57Z | |
| dc.identifier | | |
| dc.identifier | Proceedings Of The Ieee International Caracas Conference On Devices, Circuits And Systems, Iccdcs. , v. , n. , p. 276 - 280, 2004. | |
| dc.identifier | 15416275 | |
| dc.identifier | | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-28444488915&partnerID=40&md5=6f4f43fe6c3e4fbef4d61797f91ff546 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/94564 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/94564 | |
| dc.identifier | 2-s2.0-28444488915 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1242450 | |
| dc.description | This paper reports the development of a CMOS Active Pixel sensor using a good performance readout circuit. The sensor element is a photodiode implemented with n-well. Using a CMOS process based on the 2μm technology, the sensor was entirely developed in our research center. The parameters used in the CMOS process were SiO2 thickness of Tox= 30nm, junction depths (X Jn and XJp) of 0.45μm and gate of n+ poli-Si. Under this conditions threshold voltages of Vtn=0.8V and Vtp=-0.7V were obtained for VDS=0.1V. Each detector pixel in the array occupies a 130×130μm2 area with a fill-factor ∼22%, consumed power for pixel ∼2mW, dark current density 3μA/cm 2 in 25°C. Pspice simulated results are in agreement with the experimental measurements in our APS structures under different illumination levels. © 2004 IEEE. | |
| dc.description | | |
| dc.description | | |
| dc.description | 276 | |
| dc.description | 280 | |
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| dc.description | Shcherback, I., Belenky, A., Yadid-Pecht, O., Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor (2002) Optical Engineering, 41, pp. 1216-1219. , June | |
| dc.description | Cavadore, C., (1998) Conception et Caractérisation de Capteurs D'images À Pixel Actifs CMOS-APS, p. 125. , Ph.D Thesis, Université Paul Sabatier, Toulouse France | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | High Performance Active Pixel Sensors Fabricated In A Standard 2.0 μm Cmos Technology | |
| dc.type | Actas de congresos | |
