In this paper authors report morphological and deposition analysis of polySiGe thin films by means of AFM, SEM and Raman measurements and electrical characteristics of MOS capacitors using poly-SiGe electrodes. The samples were deposited in a pancake vertical LPCVD system using Silane and Germane as precursor gases in a Hydrogen carrier flow. The process pressure was 5 or 10 Torr, in a temperature range from 500°C to 750°C. Surface RMS roughness, grain size and deposition rate are evaluated. We found that very uniform films can be obtained, with rms roughness below 4 nm and grain size below 50 nm. Deposition rates as high as 1500 Å/min are achieved. The deposited samples presented Rs values well bellow similar poly-Si films and electrical characterization shows poly-SiGe as a suitable material for MOS devices.PV 2005-08 188196Salm, C., (1997) Pollycrystalline Germanium-silicon for Adevanced CMOS Technologies, , Doctorate ThesisUniversiteit TwenteNetherlandsHarame, D.L., Koester, S.J., Freeman, G., Cottrel, P., Rim, K., Dehlinger, G., Ahlgren, D., Subbanna, S., (2004) Applied Surface Science, p. 224Franke, A.E., Heck, J.M., King, T.J., Howe, R.T., (2003) Journal of Microelectromechanical Systems, 12, p. 2Teixeira, R.C., Doi, I., Diniz, J.A., Zakia, M.B.P., Swart, J.W., (2003) Influence of T on the Deposition Rate of Si-Poly Obtained by Vertical LPCVD, , XXIV CeBRAVIC, Bauru/SP, BrazilKrause, M., Stiebig, H., Carius, R., Zastrow, U., Bay, H., Wagner, H., (2002) Journal of Non Crystalline Solids, 299-302, pp. lTsang, J.C., Mooney, P.M., Dacol, F., Chu, J.O., (1994) Journal of Applied Physics, 75, p. 12Jawhari, T., (2000) ANALVSIS, 28, pp. IKamins, T.I., (1998) Polycrystalline Silicon for Integrated Circuit and Displays, , Kluwer Academic Publishers, 2nd editionHauser, J.H., CVC Software, , North Caroline State University