| dc.creator | Teixeira R.C. | |
| dc.creator | Doi I. | |
| dc.creator | Zakia M.B.P. | |
| dc.creator | Diniz J.A. | |
| dc.date | 2005 | |
| dc.date | 2015-06-26T14:10:18Z | |
| dc.date | 2015-11-26T14:10:25Z | |
| dc.date | 2015-06-26T14:10:18Z | |
| dc.date | 2015-11-26T14:10:25Z | |
| dc.date.accessioned | 2018-03-28T21:11:08Z | |
| dc.date.available | 2018-03-28T21:11:08Z | |
| dc.identifier | | |
| dc.identifier | Proceedings - Electrochemical Society. , v. PV 2005-08, n. , p. 188 - 196, 2005. | |
| dc.identifier | | |
| dc.identifier | | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-31844438333&partnerID=40&md5=f6c195efb95184812bed2f846c10858e | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/94014 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/94014 | |
| dc.identifier | 2-s2.0-31844438333 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1241521 | |
| dc.description | In this paper authors report morphological and deposition analysis of polySiGe thin films by means of AFM, SEM and Raman measurements and electrical characteristics of MOS capacitors using poly-SiGe electrodes. The samples were deposited in a pancake vertical LPCVD system using Silane and Germane as precursor gases in a Hydrogen carrier flow. The process pressure was 5 or 10 Torr, in a temperature range from 500°C to 750°C. Surface RMS roughness, grain size and deposition rate are evaluated. We found that very uniform films can be obtained, with rms roughness below 4 nm and grain size below 50 nm. Deposition rates as high as 1500 Å/min are achieved. The deposited samples presented Rs values well bellow similar poly-Si films and electrical characterization shows poly-SiGe as a suitable material for MOS devices. | |
| dc.description | PV 2005-08 | |
| dc.description | | |
| dc.description | 188 | |
| dc.description | 196 | |
| dc.description | Salm, C., (1997) Pollycrystalline Germanium-silicon for Adevanced CMOS Technologies, , Doctorate Thesis | |
| dc.description | Universiteit Twente | |
| dc.description | Netherlands | |
| dc.description | Harame, D.L., Koester, S.J., Freeman, G., Cottrel, P., Rim, K., Dehlinger, G., Ahlgren, D., Subbanna, S., (2004) Applied Surface Science, p. 224 | |
| dc.description | Franke, A.E., Heck, J.M., King, T.J., Howe, R.T., (2003) Journal of Microelectromechanical Systems, 12, p. 2 | |
| dc.description | Teixeira, R.C., Doi, I., Diniz, J.A., Zakia, M.B.P., Swart, J.W., (2003) Influence of T on the Deposition Rate of Si-Poly Obtained by Vertical LPCVD, , XXIV CeBRAVIC, Bauru/SP, Brazil | |
| dc.description | Krause, M., Stiebig, H., Carius, R., Zastrow, U., Bay, H., Wagner, H., (2002) Journal of Non Crystalline Solids, 299-302, pp. l | |
| dc.description | Tsang, J.C., Mooney, P.M., Dacol, F., Chu, J.O., (1994) Journal of Applied Physics, 75, p. 12 | |
| dc.description | Jawhari, T., (2000) ANALVSIS, 28, pp. I | |
| dc.description | Kamins, T.I., (1998) Polycrystalline Silicon for Integrated Circuit and Displays, , Kluwer Academic Publishers, 2nd edition | |
| dc.description | Hauser, J.H., CVC Software, , North Caroline State University | |
| dc.language | en | |
| dc.publisher | | |
| dc.relation | Proceedings - Electrochemical Society | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical Lpcvd | |
| dc.type | Actas de congresos | |
