Artículos de revistas
Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 854-857, 2006.
Dios-Leyva, M. de
Brandi, H. S.
Oliveira, L. E.
The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g-factor are found in quite good agreement with experimental data.854857Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)