Artículos de revistas
Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
Registro en:
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 854-857, 2006.
0103-9733
S0103-97332006000600015
10.1590/S0103-97332006000600015
Autor
Dios-Leyva, M. de
Porras-Montenegro, N.
Brandi, H. S.
Oliveira, L. E.
Institución
Resumen
The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g -factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g -factor are found in quite good agreement with experimental data. 854 857 Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)