dc.creatorDios-Leyva, M. de
dc.creatorPorras-Montenegro, N.
dc.creatorBrandi, H. S.
dc.creatorOliveira, L. E.
dc.date2006-09-01
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T11:42:25Z
dc.date2014-07-17T17:28:05Z
dc.date2015-11-26T11:42:25Z
dc.date.accessioned2018-03-28T20:46:05Z
dc.date.available2018-03-28T20:46:05Z
dc.identifierBrazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 854-857, 2006.
dc.identifier0103-9733
dc.identifierS0103-97332006000600015
dc.identifier10.1590/S0103-97332006000600015
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332006000600015
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600015
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/25722
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/25722
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1235045
dc.descriptionThe Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g
dc.description-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g
dc.description-factor are found in quite good agreement with experimental data.
dc.description854
dc.description857
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageen
dc.publisherSociedade Brasileira de Física
dc.relationBrazilian Journal of Physics
dc.rightsaberto
dc.sourceSciELO
dc.subjectg-factor
dc.subjectCyclotron effective mass
dc.subjectQuantum wells
dc.subjectMagnetic field
dc.titleElectron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
dc.typeArtículos de revistas


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