Transition between quasi 2 and 3d behavior of the binding energy of screened excitons in semiconducting quantum well structures

dc.creatorDEL CASTILLO MUSSOT, M.
dc.creatorVÁZQUEZ , G. J.
dc.creatorREYES , J. A.
dc.creatorLEE , J.
dc.creatorSPECTOR , H. N.
dc.date2009-10-05
dc.date.accessioned2018-03-16T15:43:42Z
dc.date.available2018-03-16T15:43:42Z
dc.identifierhttp://ojs.unam.mx/index.php/rmf/article/view/13885
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1201959
dc.descriptionCALCULAMOS LA ENERGÍA DE AMARRE DE EXCITONES APANTALLADOS EN UN POZO CUÁNTICO SEMICONDUCTOR COMO FUNCIÓN DEL PARÁMETRO DE APANTALLAMIENTO Y EL ANCHO DEL POZO USANDO FUNCIONES DE ONDA VARIACIONALES PARA OBTENER COTAS MÁXIMAS DE LA ENERGÍA. LA ENERGÍA DE AMARRE DECRECE AL AUMENTAR LOS VALORES DEL PARÁMETRO DE APANTALLAMIENTO Y EL ANCHO DEL POZO. SIN EMBARGO, CUANDO EL ANCHO DEL POZO SEA SUFICIENTEMENTE PEQUEÑO PARA QUE LOS ELECTRONES Y HUECOS OCUPEN LAS SUB-BANDAS DE MÍNIMA ENERGÍA, EL EXCITÓN PERMANECE LIGADO AUN PARA VALORES GRANDES DEL PARÁMETRO DE APANTALLAMIENTO, SIEMPRE QUE EL GAS DE ELECTRONES PERMANEZCA DEGENERADO.AbstractWE HAVE CALCULATED THE BINDING ENERGY OF SCREENED EXCITONS IN A SEMICONDUCTING QUANTUM WELL STRUCTURE AS A FUNCTION OF SCREENING PARAMETER AND THE WIDTH OF THE QUANTUM WELL USING VARIATIONAL WAVE FUNCTIONS TO OBTAIN UPPER BOUNDS FOR THE ENERGY. THE BINDING ENERGY DECREASES WITH INCREASING VALUES OF THE SCREENING PARAMETER AND WITH INCREASING WELL WIDTH. HOWEVER, AS LONG AS THE WELL WIDTH IS NARROW ENOUGH SO THE ELECTRONS AND HOLES OCCUPY THEIR LOWEST-ENERGY SUBBANDS, THE EXCITON REMAINS BOUND EVEN FOR LARGE VALUES OF THE SCREENING PARAMETER WHENEVER THE ELECTRON GAS REMAINS NONDEGENERATE.es-ES
dc.descriptionWE HAVE CALCULATED THE BINDING ENERGY OF SCREENED EXCITONS IN A SEMICONDUCTING QUANTUM WELL STRUCTURE AS A FUNCTION OF SCREENING PARAMETER AND THE WIDTH OF THE QUANTUM WELL USING VARIATIONAL WAVE FUNCTIONS TO OBTAIN UPPER BOUNDS FOR THE ENERGY. THE BINDING ENERGY DECREASES WITH INCREASING VALUES OF THE SCREENING PARAMETER AND WITH INCREASING WELL WIDTH. HOWEVER, AS LONG AS THE WELL WIDTH IS NARROW ENOUGH SO THE ELECTRONS AND HOLES OCCUPY THEIR LOWEST-ENERGY SUBBANDS, THE EXCITON REMAINS BOUND EVEN FOR LARGE VALUES OF THE SCREENING PARAMETER WHENEVER THE ELECTRON GAS REMAINS NONDEGENERATE.en-US
dc.formatapplication/pdf
dc.languagespa
dc.publisherRevista Mexicana de Físicaes-ES
dc.relationhttp://ojs.unam.mx/index.php/rmf/article/view/13885/13222
dc.sourceRevista Mexicana de Física; Vol 49, No 002 (2003)es-ES
dc.subjectENERGÍA DE AMARRE DE EXCITONES APANTALLADOS; ESTRUCTURAS DE BAJA DIMENSIONALIDAD; SEMICONDUCTORESes-ES
dc.subjectBINDING ENERGY OF SCREENED EXCITONS; LOW-DIMENSIONAL STRUCTURES; SEMICONDUCTORSen-US
dc.titleTransition between quasi 2 and 3d behavior of the binding energy of screened excitons in semiconducting quantum well structureses-ES
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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