EN EL PRESENTE TRABAJO SE ESTUDIAN LAS PROPIEDADES LUMINISCENTES DE PELÍCULAS DELGADAS DE INGAP CRECIDAS POR EL MÉTODO DE EPITAXIA DE LA FASE LÍQUIDA (EFL) SOBRE SUBSTRATOS DE GAAS. LAS MEDICIONES DE FOTOLUMINISCENCIA (FL) SE REALIZARON EN UN AMPLIO INTERVALO DE TEMPERATURAS (4 ” 250 K) Y DE INTENSIDADES DE LA RADIACIÓN DE EXCITACIÓN (4 ÓRDENES DE MAGNITUD). ASÍ MISMO, LA SEÑAL DE FL HA SIDO ANALIZADA EN DOS DIRECCIONES PERPENDICULARES DE POLARIZACIÓN LAS CUALES COINCIDEN CON LAS DIRECCIONES [011] Y [011] DEL PLANO DEL SUBSTRATO. SE HA ENCONTRADO QUE EL APORTE PRINCIPAL AL ESPECTRO A BAJAS TEMPERATURAS (4K) LO DA LA TRANSICIÓN DONADOR-ACEPTOR, MIENTRAS QUE A ALTAS TEMPERATURAS (250K) LA TRANSICIÓN BANDA-BANDA. LAS DEPENDENCIAS CON LA INTENSIDAD DE EXCITACIÓN MUESTRAN UN COMPORTAMIENTO CARACTERÍSTICO PARA LA RECOMBINACIÓN DONADOR-ACEPTOR. LA DIFERENCIA EN LA POSICIÓN DEL MÁXIMO DE PICO DE FL PARA DISTINTAS POLARIZACIONES SE ATRIBUYE A LA SEPARACIÓN DE LAS BANDAS DE VALENCIA DE HUECOS LIGEROS Y PESADOS INDUCIDA POR LA DEFORMACIÓN DE LA ESTRUCTURA CRISTALINA DE LA PELÍCULA, CUYA CONSTANTE DE RED NO SE ACOPLA RETICULARMENTE A LA DEL SUBSTRATO. ADEMÁS LA DIFERENCIA ENTRE LA FORMA DE LOS ESPECTROS PARA DISTINTAS POLARIZACIONES INDICA LA PRESENCIA DE ANISOTROPÍA PARA DISTINTAS DIRECCIONES CRISTALINAS.AbstractWE HAVE STUDIED THE LUMINESCENT PROPERTIES OF INGAP FILMS GROWN ON GAAS SUBSTRATES BY LIQUID PHASE EPITAXY (LPE). PHOTOLUMINESCENCE (PL) MEASUREMENTS WERE PERFORMED IN WIDE TEMPERATURE (4 250 K) AND EXCITING POWER DENSITY (4 ORDERS OF MAGNITUDE) RANGES FOR DIFFERENT POLARIZATION OF THE EMITTED RADIATION ALONG THE [011] AND [011] DIRECTIONS. IT WAS FOUND THAT DONOR-ACCEPTOR TRANSITION DOMINATES AT LOW TEMPERATURE (4K) WHILE THE BAND-TO-BAND TRANSITION AT HIGHER TEMPERATURE (250K). THE DEPENDENCE WITH THE EXCITATION INTENSITY SHOWS THE CHARACTERISTIC BEHAVIOR OF DONOR-ACCEPTOR RECOMBINATION. THE DIFFERENCE IN THE SPECTRAL PEAK POSITION FOR DIFFERENT POLARIZATIONS IS A RESULT OF VALENCE-BAND SPLITTING INTO A HEAVY AND LIGHT HOLE BANDS DUE TO LATTICE MISMATCH STRAIN. MOREOVER, THE DIFFERENCE OF THE LINE SHAPE OF THE SPECTRA FOR DIFFERENT POLARIZATIONS INDICATES THE PRESENCE OF ANISOTROPY FOR DIFFERENT CRYSTALLOGRAPHIC DIRECTIONS.WE HAVE STUDIED THE LUMINESCENT PROPERTIES OF INGAP FILMS GROWN ON GAAS SUBSTRATES BY LIQUID PHASE EPITAXY (LPE). PHOTOLUMINESCENCE (PL) MEASUREMENTS WERE PERFORMED IN WIDE TEMPERATURE (4 250 K) AND EXCITING POWER DENSITY (4 ORDERS OF MAGNITUDE) RANGES FOR DIFFERENT POLARIZATION OF THE EMITTED RADIATION ALONG THE [011] AND [011] DIRECTIONS. IT WAS FOUND THAT DONOR-ACCEPTOR TRANSITION DOMINATES AT LOW TEMPERATURE (4K) WHILE THE BAND-TO-BAND TRANSITION AT HIGHER TEMPERATURE (250K). THE DEPENDENCE WITH THE EXCITATION INTENSITY SHOWS THE CHARACTERISTIC BEHAVIOR OF DONOR-ACCEPTOR RECOMBINATION. THE DIFFERENCE IN THE SPECTRAL PEAK POSITION FOR DIFFERENT POLARIZATIONS IS A RESULT OF VALENCE-BAND SPLITTING INTO A HEAVY AND LIGHT HOLE BANDS DUE TO LATTICE MISMATCH STRAIN. MOREOVER, THE DIFFERENCE OF THE LINE SHAPE OF THE SPECTRA FOR DIFFERENT POLARIZATIONS INDICATES THE PRESENCE OF ANISOTROPY FOR DIFFERENT CRYSTALLOGRAPHIC DIRECTIONS.