| dc.creator | ÁVILA GARCÍA, ALEJANDRO | |
| dc.creator | REYES BARRANCA, MARIO ALFREDO | |
| dc.date | 2009-10-05 | |
| dc.date.accessioned | 2018-03-16T15:42:49Z | |
| dc.date.available | 2018-03-16T15:42:49Z | |
| dc.identifier | http://ojs.unam.mx/index.php/rmf/article/view/13853 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1201796 | |
| dc.description | SE CONSTRUYÓ UN SISTEMA COMPUTARIZADO PARA CARACTERIZAR NIVELES PROFUNDOS EN SEMICONDUCTORES. SE BASA EN LA BIEN CONOCIDA TÉCNICA DLTS (ESPECTROSCOPA DE TRANSITORIOS DE NIVELES PROFUNDOS), PERO SE OBTIENE GRAN VERSATILIDAD EN EL MANEJO DE LOS DATOS PORQUE USA UNA TARJETA DE CONVERSIN ANALGICO-DIGITAL (A/D) PARA DIGITALIZAR TRANSITORIOS DE CAPACITANCIA. ESTOS TRANSITORIOS SON ANALIZADOS PARA OBTENER INFORMACIÓN DE LAS TRAMPAS DENTRO DEL SEMICONDUCTOR. UNA COMPUTADORA PERSONAL CONTROLA LA ADQUISICIÓN, ALMACENAMIENTO, ANÁLISIS Y PRESENTACIÓN DE LOS RESULTADOS DE LOS DATOS. SE DESARROLLÓ UN PROGRAMA EN LENGUAJE BASICO PARA ALCANZAR TODOS ESTOS OBJETIVOS. ADEMÁS DE SU VERSATILIDAD, EL SISTEMA ES CAPAZ DE OBTENER LOS PARÁMETROS DESEADOS CON SOLO UN BARRIDO EN TEMPERATURA, LO CUAL ES UNA VENTAJA IMPORTANTE EN RELACIÓN CON EL TIEMPO NECESARIO EXPERIMENTALMENTE PARA REALIZAR LA MEDICINA. PARA ILUSTRAR SU FUNCIONAMIENTO, SE MUESTRAN LOS RESULTADOS OBTENIDOS PARA UNA ESTRUCTURA DE POTENCIA DE SILICIO TIPO PIN.AbstractA COMPUTERIZED SYSTEM FOR DEEP LEVEL CHARACTERIZATION IN SEMICONDUCTORS HAS BEEN SET UP. IT IS BASED ON THE WELL KNOWN DLTS (DEEP LEVEL TRANSIENT SPECTROSCOPY) TECHNIQUE, BUT HIGH VERSATILITY FOR DATA MANIPULATION IS ACHIEVED THROUGH AN ANALOG-TO-DIGITAL CONVERSION CARD (A/D) THAT DIGITIZES CAPACITANCE TRANSIENTS. THESE TRANSIENTS ARE ANALYZED TO PROVIDE INFORMATION ON THE TRAPS WITHIN THE SEMICONDUCTOR. A PC-BASED PROGRAM IN BASIC CONTROL ACQUISITION, STORAGE, ANALYSIS AND PRESENTATION OF RESULTS. THE SYSTEM IS ABLE OF OBTAINING THE DESIRED PARAMETERS BY ONLY ONE TEMPERATURE SCAN, WHICH IS AN IMPORTANT ADVANTAGE, TAKING INTO ACCOUNT THE EXPERIMENTAL TIME EXPERIMENTALLY NEEDED FOR THE MEASUREMENT. EXPERIMENTAL RESULTS FOR A SILICON PIN POWER STRUCTURE ARE SHOWN, TO ILLUSTRATE ITS PERFORMANCE. | es-ES |
| dc.description | A COMPUTERIZED SYSTEM FOR DEEP LEVEL CHARACTERIZATION IN SEMICONDUCTORS HAS BEEN SET UP. IT IS BASED ON THE WELL KNOWN DLTS (DEEP LEVEL TRANSIENT SPECTROSCOPY) TECHNIQUE, BUT HIGH VERSATILITY FOR DATA MANIPULATION IS ACHIEVED THROUGH AN ANALOG-TO-DIGITAL CONVERSION CARD (A/D) THAT DIGITIZES CAPACITANCE TRANSIENTS. THESE TRANSIENTS ARE ANALYZED TO PROVIDE INFORMATION ON THE TRAPS WITHIN THE SEMICONDUCTOR. A PC-BASED PROGRAM IN BASIC CONTROL ACQUISITION, STORAGE, ANALYSIS AND PRESENTATION OF RESULTS. THE SYSTEM IS ABLE OF OBTAINING THE DESIRED PARAMETERS BY ONLY ONE TEMPERATURE SCAN, WHICH IS AN IMPORTANT ADVANTAGE, TAKING INTO ACCOUNT THE EXPERIMENTAL TIME EXPERIMENTALLY NEEDED FOR THE MEASUREMENT. EXPERIMENTAL RESULTS FOR A SILICON PIN POWER STRUCTURE ARE SHOWN, TO ILLUSTRATE ITS PERFORMANCE. | en-US |
| dc.format | application/pdf | |
| dc.language | spa | |
| dc.publisher | Revista Mexicana de Física | es-ES |
| dc.relation | http://ojs.unam.mx/index.php/rmf/article/view/13853/13190 | |
| dc.source | Revista Mexicana de Física; Vol 48, No 006 (2002) | es-ES |
| dc.subject | DLTS; COMPUTARIZADO; CARACTERIZACIN | es-ES |
| dc.subject | DLTS; COMPUTERIZED; CHARACTERIZATION | en-US |
| dc.title | Computerized dlts system to characterize deep levels in semiconductors | es-ES |
| dc.type | Artículos de revistas | |
| dc.type | Artículos de revistas | |
