INVESTIGAMOS EL GRABADO IÓNICO REACTIVO DE SILICIO USANDO PLASMAS CON MEZCLAS DE GASES QUE CONTIENEN FLUOR SF6/CH4(CF4)/O2/AR PARA SU APLICACIÓN EN MICROSISTEMAS ELECTROMECÁNICOS. EXAMINAMOS LA VELOCIDAD DE GRABADO Y LA ANISOTROPIA DEL PERFIL EN FUNCIÓN DE LA COMPOSICIÓN DEL GAS, DEL MATERIAL DEL ELECTRODO Y DE LA POTENCIA DE RADIO FRECUENCIA. LA PROFUNDIDAD DE GRABADO SE DETERMINA USANDO UN PERFILOMETRO Y LOS PERFILES GRABADOS SE ANALIZAN MEDIANTE UN MICROSCOPIO ELECTRÓNICO DE BARRIDO. COMO MATERIAL ENMASCARANTE, USAMOS UNA PELÍCULA DE ALUMINIO DEPOSITADA POR EVAPORACIÓN. OBTUVIMOS UNA ALTA ANISOTROPIA DE GRABADO DE 0.95 CON PROFUNDIDADES DE 20 A 30 MICRAS Y VELOCIDADES DE GRABADO DE APROXIMADAMENTE 0.3 A 0.66 µM/MIN. EL GRABADO ALTAMENTE ANISOTROPO SE BASA EN UN MECANISMO QUE AUMENTA EL BOMBARDEO DE IONES Y PROTEGE LAS PAREDES POR POLIMERIZACION Y/U OXIDACIÓN PARA EVITAR EL GRABADO LATERAL. SIN EMBARGO, BAJO CONDICIONES DE GRABADO ANISOTROPO SE OBSERVARON CONSIDERABLES DAÑOS EN LAS SUPERFICIES GRABADAS (FORMACIÓN DE RUGOSIDAD). PARA MEJORAR LA MORFOLOGÍA DE LA SUPERFICIE REALIZAMOS PROCESOS HÚMEDOS Y SECOS DE LIMPIEZA PARA REMOVER LOS RESIDUOS SUPERFICIALES PRODUCTO DEL GRABADO I ONICO REACTIVO.AbstractWE INVESTIGATED THE REACTIVE ION ETCHING OF SILICON USING SF6/CH4(CF4)/O2/AR GAS MIXTURES CONTAINING FLUORINE FOR MEMS APPLICATIONS. ETCH RATES AND ANISOTROPY OF ETCH PROFILES WERE EXAMINED AS A FUNCTION OF GAS COMPOSITION, MATERIAL OF ELECTRODE, AND RF POWER. ETCH DEPTHS WERE MEASURED USING A PROFILOMETER, AND ETCH PROFILES WERE ANALYZED BY SCANNING ELECTRON MICROSCOPE. AS A MASK MATERIAL, AN ALUMINIUM FILM DEPOSITED BY EVAPORATION, WAS USED. HIGH ANISOTROPY OF ETCHING OF 0.95 WAS ACHIEVED AT ETCH DEPTHS UP TO 20-30 MICROMETERS AND ETCH RATES OF APPROXIMATELY 0.3-0.6 µM/MIN. HIGHLY ANISOTROPIC ETCHING IS BASED ON A MECHANISM THAT ENHANCE THE ION BOMBARDING AND PROTECTS THE SIDEWALLS DUE TO POLYMERIZATION AND/OR OXIDATION MECHANISMS IN ORDER TWE INVESTIGATED THE REACTIVE ION ETCHING OF SILICON USING SF6/CH4(CF4)/O2/AR GAS MIXTURES CONTAINING FLUORINE FOR MEMS APPLICATIONS. ETCH RATES AND ANISOTROPY OF ETCH PROFILES WERE EXAMINED AS A FUNCTION OF GAS COMPOSITION, MATERIAL OF ELECTRODE, AND RF POWER. ETCH DEPTHS WERE MEASURED USING A PROFILOMETER, AND ETCH PROFILES WERE ANALYZED BY SCANNING ELECTRON MICROSCOPE. AS A MASK MATERIAL, AN ALUMINIUM FILM DEPOSITED BY EVAPORATION, WAS USED. HIGH ANISOTROPY OF ETCHING OF 0.95 WAS ACHIEVED AT ETCH DEPTHS UP TO 20-30 MICROMETERS AND ETCH RATES OF APPROXIMATELY 0.3-0.6 µM/MIN. HIGHLY ANISOTROPIC ETCHING IS BASED ON A MECHANISM THAT ENHANCE THE ION BOMBARDING AND PROTECTS THE SIDEWALLS DUE TO POLYMERIZATION AND/OR OXIDATION MECHANISMS IN ORDER T