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Propriedades ópticas de pontos quânticos de InAs em nanomembranas semicondutoras
(Universidade Federal de Minas GeraisUFMG, 2014-02-26)
In this work we study how the optical properties of InAs quantum dots embedded in III-V semiconductor nanomembranes are a_ected by the neighborhood of the two symmetrically located sample surfaces. Photoluminescence ...
Kinetic Effects in InP Nanowire Growth and Stacking Fault Formation: The Role of Interface Roughening
(Amer Chemical SocWashingtonEUA, 2011)
Estudios fotocatalíticos de reducción y oxidación con TiO2, Fe/TiO2 y Pt/TiO2Photocatalytic studies of reduction and oxidation with TiO2, Fe/TiO2 and Pt/TiO2
(Facultad de Ciencias Exactas y Naturales. Universidad de Buenos Aires, 2012)
Ga1- xInxAsySb1- y/GaSb spherical quantum dot in a magnetic field
(2012-12)
Quaternary semiconductor alloys type-I are appropriated materials for heterostructure devices because they provide a natural form to tune the magnitude of the band gap so that it can operate in the mid-infrared (mid-IR) ...
Theoretical investigation of Hf and Zr defects in c-Ge
(IOP PUBLISHING LTD, 2009)
The introduction of high-permittivity gate dielectric materials into complementary metal oxide semiconductor technology has reopened the interest in Ge as a channel material mainly due to its high hole mobility. Since ...
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
(American Institute of Physics (AIP), 2002-02-04)
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam ...
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
(American Institute of Physics (AIP), 2002-02-04)
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam ...
Structural and electrical properties of Co-doped ZnO prepared by DC-Magnetron co-sputtering for spintronic applications
(Universidad Nacional de ColombiaBogotá - Ciencias - Maestría en Ciencias - FísicaDepartamento de FísicaFacultad de CienciasBogotá, ColombiaUniversidad Nacional de Colombia - Sede Bogotá, 2021-06-09)
In this work, the e ect of Cobalt in ZnO thin lms was studied. The samples were synthesized
by DC-Magnetron co-sputtering over di erent substrates (Glass, Al2O3, ITO, Si,
and Au). Structural and electrical properties ...