Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Artigo

Date

2002-02-04

Registration in:

Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.

0003-6951

http://hdl.handle.net/11449/40011

10.1063/1.1436270

WOS:000173617700022

WOS000173617700022.pdf

http://repositorioslatinoamericanos.uchile.cl/handle/2250/3911042

Author

Universidade de São Paulo (USP)

Univ Gesamthsch Paderborn

Univ Jena

Universidade Estadual Paulista (Unesp)

Institutions

Universidade Paulista Júlio de Mesquita Filho (Brasil)

Abstract

Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.

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