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A new approach to the derivation of dynamic information from ionosonde measurements
(European Geosciences Union, 2003-11-30)
A new approach is developed to derive dynamic information near the peak of the ionospheric F-layer from ionosonde measurements. This approach avoids deducing equivalent winds from the displacement of the observed peak ...
Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots
(AMER INST PHYSICS, 2008)
We report a comprehensive study of weak-localization and electron-electron interaction effects in a GaAs/InGaAs two-dimensional electron system with nearby InAs quantum dots, using measurements of the electrical conductivity ...
A 540μT-1 silicon-based MAGFETA 540μT-1 silicon-based MAGFET
(Revista Mexicana de Física, 2009)
Superconductivity at 9.5 K in the Ti2GeC compound
(OFICYNA WYDAWNICZA POLITECHNIKI WROCLAWSKIEJWROCLAW, 2012)
We report on the investigation of the Ti2GeC properties by X-ray diffraction, magnetic and electrical resistivity measurements. Polycrystalline samples of Ti2GeC with nominal compositions were prepared by solid state ...
Estudo de exchange bias via magnetorresistência anisotrópica
(Universidade Federal de Santa MariaBRFísicaUFSMPrograma de Pós-Graduação em Física, 2013-08-15)
Anisotropic magnetoresistance (AMR) corresponds to the change of R in an ferromagnetic
material with the angle between electric current and magnetization. Sensors using this
effect are suited to detect both angular and ...
Hamiltonian formulation of the full vectorial Helmholtz equation for modeling the interaction between ME composites and optical _ber immersed in electromagnetic _elds from high voltage power systems
(2019-06-21)
TThis thesis deals with the proposal, analytical background and practical implementation of fiber optic based sensors for measuring electrical variables in high voltage systems. The thesis presents the physical and ...
Estudo de interferência de elétrons em dispositivos mesoscópicos no limite Hall quântico
(Universidade Federal de Minas GeraisUFMG, 2006-04-26)
In this work we introduce the basic concepts required to understand how electronic interferometers work. The interferometers are semiconductor devices based in GaAs/AlGaAs heterojunctions where a high mobility two-dimensional ...
Tesis caracterización estructural y magnética del multiferroico Bi0.96Sm0.04FeO3 y Bi0.93Sm0.07FeO3
(Universidad Santo TomásPregrado Ingeniería ElectrónicaFacultad de Ingeniería Electrónica, 2020-05-22)
This work reports synthesis and characterization of the systems and , produced by the solid-state reaction method. The oxides obtained was characterized by X ray diffraction (XRD), Rietveld refinement and magnetization ...