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Thin film deposition with time-varying temperature
(2013)
We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients ...
Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H films
(Amer Inst PhysicsMelvilleEUA, 1999)
Graphene on nickel (100) micrograins: Modulating the interface interaction by extended moiré superstructures
(Pergamon-Elsevier Science Ltd, 2018-04)
Interaction with the substrate strongly affects the electronic/chemical properties of supported graphene. So far, graphene grown by chemical vapor deposition (CVD) on catalytic single crystal transition metal surfaces - ...
Synthesis Of Low-density, Carbon-doped, Porous Hexagonal Boron Nitride Solids
(AMER CHEMICAL SOCWASHINGTON, 2015)
Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides
(Elsevier, 2020)
4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond ...
Molecular and morphological characterization of bis benzimidazo perylene films and surface-enhanced phenomena
(Amer Chemical Soc, 2008-04-03)
Thin solid films of bis benzimidazo perylene (AzoPTCD) were fabricated using physical vapor deposition (PVD) technique. Thermal stability and integrity of the AzoPTCD PVD films during the fabrication (similar to 400 degrees ...
Molecular and morphological characterization of bis benzimidazo perylene films and surface-enhanced phenomena
(Amer Chemical Soc, 2008-04-03)
Thin solid films of bis benzimidazo perylene (AzoPTCD) were fabricated using physical vapor deposition (PVD) technique. Thermal stability and integrity of the AzoPTCD PVD films during the fabrication (similar to 400 degrees ...
Transport mechanism in lightly doped hydrogenated microcrystalline silicon thin films
(American Institute of Physics, 2005-12)
Boron-doped microcrystalline silicon films have been deposited in a plasma-enhanced chemical vapor deposition system using silane diluted in hydrogen, and diborane sB2H6d as a dopant gas. The temperature dependence of the ...