Buscar
Mostrando ítems 1-10 de 1528
A modification of close-space vapor transport combined with free evaporation technique for doping semiconductor films and production of interfaces
(Sociedad Mexicana de Fisica, 2013-01-16)
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Nonlinear size effects of hot electrons in semiconductor thin filmsNonlinear size effects of hot electrons in semiconductor thin films
(Revista Mexicana de Física, 2009)
Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
(2013-01-29)
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like ...
Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
(2013-01-29)
The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like ...
Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films
(Elsevier B.V., 2008-12-15)
The optical absorption edges of nanocrystalline Ga1-xMnxAs:H films (0.000 <= x <= 0.081) prepared by sputtering were analyzed. The influence of Mn and hydrogen incorporations were both investigated. The energy dispersive ...
Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga1-xMnxAs:H nanocrystalline films
(Elsevier B.V., 2008-12-15)
The optical absorption edges of nanocrystalline Ga1-xMnxAs:H films (0.000 <= x <= 0.081) prepared by sputtering were analyzed. The influence of Mn and hydrogen incorporations were both investigated. The energy dispersive ...
Transient decay of photoinduced current in semiconductors and heterostructures
(2020-01-01)
Defects that exhibit some sort of lattice relaxation usually present an energy barrier for electron capture, and the possibility of developing the phenomenon known as persistent photoconductivity (PPC). In this effect, ...