We investigate for the first time the influence of the back gate bias (VB) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, it ...

We investigate for the first time the influence of the back gate bias (V-B) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, ...

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled ...

This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Ω-gate nanowire, for different width and channel length. Threshold voltage and subthreshold swing present a higher variation with the ...

This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Omega-gate nanowire, for different width and channel length. Threshold voltage and subthreshold swing present a higher variation with ...

© 2018 National Academy of Sciences. All Rights Reserved. The voltage-gated proton (Hv1) channel, a voltage sensor and a conductive pore contained in one structural module, plays important roles in many physiological ...

IBM's quantum computers implement gates from Clifford+T gate library. All single qubit gates are implemented, but only a subset of the possible CNOT are provided. It is well known that the functionally of the missing gates ...

IBM's quantum computers implement gates from Clifford +T gate library. All single qubit gates are implemented, but only a subset of the possible CNOT are provided. It is well known that the functionally of the missing gates ...

This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN ...