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REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
(Elsevier Science SaLausanneSuíça, 1993)
Raman and FTIR Spectroscopy of GaSb and AlxGai.xSb Alloys with Nanometric Thickness Grown at Low Temperatures by Liquid Phase Epitaxy
(2012-12-17)
GaSb and AlxGai.xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low
temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower ...
Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
(Spie-int Soc Optical Engineering, 2018-01-01)
We investigate the formation of GaN nanowires in plasma-assisted molecular beam epitaxy on epitaxial graphene prepared on SiC(0001) using the surface graphitization method in an inductively heated furnace. The pristine ...
Role of V/III ratio on atomic ordering and surface morphology of InGaP layers grown by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 2003)
Growth of EuTe islands on SnTe by molecular beam epitaxy
(ELSEVIER SCIENCE BV, 2010)
Semiconductor magnetic quantum dots are very promising structures, with novel properties that find multiple applications in spintronic devices. EuTe is a wide gap semiconductor with NaCl structure, and strong magnetic ...
PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
(Elsevier Science BvAmsterdamHolanda, 1991)
Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
(Elsevier Science BvAmsterdamHolanda, 2010)
Grafeno epitaxial sobre sic(0001): crescimento, intercalação e efeitos de interface
(Universidade Federal de Minas GeraisUFMG, 2019-08-09)
In this work we investigate the influence of the graphene-substrate interface on the electronic properties of quasi-free-standing (QFS) bilayer graphene grown on silicon carbide (SiC). The QFS bilayers were developed by ...
On the nucleation of GaP/GaAs and the effect of buried stress fields
(2006-08-23)
We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study ...