Artículos de revistas
Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
Registro en:
Journal Of Crystal Growth. Elsevier Science Bv, v. 312, n. 15, n. 2279, n. 2283, 2010.
0022-0248
WOS:000279409300019
10.1016/j.jcrysgro.2010.04.044
Autor
Mialichi, JR
Frateschi, NC
Institución
Resumen
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) We present the growth of stacked layers of InAs quantum dots directly on high bandgap In0.68Ga0.32As0.7P0.3 (lambda(g) = 1420 nm) barriers. The quaternary material is lattice matched to InP forming a double hetero-structure. Indium flux, number of InAs stacked layers and InGaAsP inner separation layer thickness were investigated. Photoluminescence (PL) and atomic force microscopy (AFM) analysis indicate the occurrence of gallium diffusion and the arsenic/phosphorus (As/P) exchange with the InGaAsP barriers. As a result, shorter wavelength emission is observed, making the structures suitable for telecom applications. (C) 2010 Elsevier B.V. All rights reserved. 312 15 2279 2283 Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) CEPOF INCT Fotonicom Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)