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Structural properties of aluminum-nitrogen films prepared at low temperature
(Amer Inst PhysicsMelvilleEUA, 2002)
Transient transport in III-nitrides: interplay of momentum and energy relaxation times
(Iop Publishing LtdBristolInglaterra, 2007)
Effective electronic masses in wurtzite and zinc-blende GaN and AlN
(2001)
The effective electron and hole masses are fundamental quantities of semiconductors, used in numerous analyses of experiments and theoretical investigations. We present calculations of the band structure near the band edges ...
Spin-relaxation time in the impurity band of wurtzite semiconductors
(American Physical Society, 2017-09-18)
The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin ...
First-principle calculations of optical properties of wurtzite AlN and GaN
(2001)
The imaginary part of the dielectric function of wurtzite AlN and GaN has been calculated in the long wavelength limit, using two different first-principle electronic structure methods. The first method is a full-potential ...
Urbach's tail in III-nitrides under an electric field
(Amer Inst PhysicsMelvilleEUA, 2001)
Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN
(2001)
We have investigated the electronic structure near the band edges in intrinsic and heavily n-type doped GaN and AlN. Both the wurtzite and the zinc-blende polytypes have been considered. The electronic structures of the ...