Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1–20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the ...

In this paper, we demonstrated the cleaning and nano-oxidation of Si-wafer surfaces by atmospheric pressure plasma, generated in ambient air using diffuse coplanar surface barrier discharge. Plasma treatment for one second ...

Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial ...

To probe the interface of silicon sol–gel bonded wafers we developed in–situ micromechanical bending test coupled with optical microscopy. The silicon wafers were bonded together at room temperature using sol–gel ...

In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by ...