Buscar
Mostrando ítems 1-10 de 22
Study of underlapped finfets behavior for a radiation sensing purpose
(2020-04-01)
In this paper the electrical characteristics of the Underlapped FinFET transistor is studied for different underlap lengths and underlap oxide material. Disturbs caused by underlap region, such as series resistance effect ...
The impact of spacer oxide material on the underlapped soi-nfinfet working as charged based radiation sensor
(2021-08-23)
— In this work, the influence of the underlap region on the electrical behavior of a SOI-nFinFET transistor has been studied by numerical simulation with the purpose of radiation sensing. The analysis has been performed ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016-11-02)
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(Ieee, 2016-01-01)
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Influence of channel silicon thickness and biological material permittivity on nTFET biosensor
(2018-10-26)
This work analyzes the effect of channel silicon thickness for different biological materials on n-type Tunnel-FET (nTFET) working as a biosensor. The bioelement materials are simulated using different dielectric permittivity ...
Influence of Channel Silicon Thickness and Biological Material Permittivity on nTFET Biosensor
(Ieee, 2018-01-01)
This work analyzes the effect of channel silicon thickness for different biological materials on n-type Tunnel-FET (nTFET) working as a biosensor. The bioelement materials are simulated using different dielectric permittivity ...
Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
(Ieee, 2019-01-01)
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness ...
Impact of drain doping and biomaterial thickness in a dielectrically modulated fringing field bio-TFET device
(2019-08-01)
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). ...
The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2012)
The floating-body-RAM sense margin and retention-time dependence on the gate length is investigated in UTBOX devices using BJT programming combined with a positive back bias (so-called V th feedback). It is shown that the ...
Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2012)
One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of ...