Buscar
Mostrando ítems 1-10 de 283
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
(2017-06-29)
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks ...
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures
(Ieee, 2017-01-01)
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks ...
Back gate influence on transistor efficiency of SOI nMOS Ω-gate nanowire down to 10nm width
(2017-11-15)
This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Ω-gate nanowire, for different width and channel length. Threshold voltage and subthreshold swing present a higher variation with the ...
Back Gate Influence on Transistor Efficiency of SOI nMOS Omega-gate Nanowire down to 10nm Width
(Ieee, 2017-01-01)
This paper shows the influence of back gate bias on transistor efficiency of nMOS SOI Omega-gate nanowire, for different width and channel length. Threshold voltage and subthreshold swing present a higher variation with ...
Experimental Analysis of Trade-Off between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors
(2021-01-01)
This work presents a trade-off analysis between transistor efficiency (gm/ID which is proportional to the intrinsic voltage gain Av) and the unit gain frequency (fT) of the nanosheet (NSH) NMOS devices. The analyses were ...
Trade-off analysis between gm/ID and fT of nanosheet NMOS transistors with different metal gate stack at high temperature
(2022-05-01)
In this work the gate-all-around nanosheet transistor is analyzed at high temperatures, from analog point of view. At first, the gate-all-around nanosheet (NS) behavior is compared with reported omega-gate nanowire (NW) ...
New family of zero-current-switching PWM converter
(1999-12-01)
A new family of dc-to-dc pulse-width-modulated (PWM) converters is presented. These converters feature soft-commutation at zero-current (ZC) in the active switches. The new ZCS-PWM Boost and new ZCS-PWM Zeta converters, ...