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Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
(2017-02-01)
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the ...
Rebound effect on Charged Based Bio-TFETs for different biomolecules
(Ieee, 2019-01-01)
In this work, the charged biomolecules with different permittivity (epsilon) localized on the drain underlap region of a double gate (DG) N-type tunneling field effect transistor (nTFET) for biosensing purpose (Bio-TFET) ...
Impact of process and device dimensions on Bio-TFET Sensitivity
(Ieee, 2018-01-01)
This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials ...
Impact of process and device dimensions on Bio-TFET Sensitivity
(2019-02-11)
This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials ...
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
(2018-06-06)
This work studies differential pair circuits designed with Line tunnel field effect transistors (TFETs), comparing their suitability with conventional Point TFETs. Differential voltage gain (A d), compliance voltage and ...
Experimental Analysis of Differential Pairs Designed with Line Tunnel FET Devices
(Ieee, 2017-01-01)
The aim of this work is to study, for the first time, the behavior of differential pair circuits designed with Line TFETs and compare the suitability of this technology with alternatives such as FinFETs and Point TFETs. ...
Experimental analysis of differential pairs designed with line tunnel FET devices
(2018-03-07)
The aim of this work is to study, for the first time, the behavior of differential pair circuits designed with Line TFETs and compare the suitability of this technology with alternatives such as FinFETs and Point TFETs. ...
Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
(Ieee, 2019-01-01)
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness ...
Impact of drain doping and biomaterial thickness in a dielectrically modulated fringing field bio-TFET device
(2019-08-01)
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). ...
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
(Iop Publishing Ltd, 2020-09-01)
In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. ...