Buscar

Mostrando ítems 1-10 de 1268

A modification of close-space vapor transport combined with free evaporation technique for doping semiconductor films and production of interfaces

Autor desconocido (Sociedad Mexicana de Fisica, 2013-01-16)

[en] CARBON DOPING IN INAIAS EPITAXIAL LAYERS[pt] DOPAGEM CARBONO EM CAMADAS EPITAXIAIS DE INALAS

MARIO LUIS PIRES GONCALVES RIBEIRO

[en] CARBON DOPING IN INAIAS EPITAXIAL LAYERS[pt] DOPAGEM CARBONO EM CAMADAS EPITAXIAIS DE INALAS

MARIO LUIS PIRES GONCALVES RIBEIRO

Impurity cluster effects in high- and low-doping semiconductor materials

Silva, A. Ferreira Da (2011)

Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells

Universidade Estadual Paulista (Unesp); Universidade de São Paulo (USP) (2016-08-01)

We present a study of the electrical properties of electrochemically doped conjugated polymers using polymeric light-emitting electrochemical cells (PLECs) and interpreting the results according to a phenomenological model ...

Neutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactors

CARBONARI, A.W.; 4th MEETING ON NUCLEAR APPLICATIONS, ENCONTRO NACIONAL DE APLICACOES NUCLEARES (2014)

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

BOZKURT, M.; GRANT, V. A.; ULLOA, J. M.; CAMPION, R. P.; FOXON, C. T.; MAREGA JUNIOR, Euclydes; SALAMO, G. J.; KOENRAAD, P. M. (AMER INST PHYSICS, 2010)

Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...

Neutron transmutation doping of silicon and others semiconductor materials

CARBONARI, A.W.; SAXENA, R.N.; 8th BRAZILIAN WORKSHOP ON SEMICONDUCTOR PHYSICS (2014)

Contribuição para a sintese de diamante com dopagens de boro, nitrogenio ou enxofreStudy of diamond doping with boron, sulphur and nitrogen

Correa, Washington Luiz Alves ([s.n.], 2004)

Bismuth doping of hydrogenated amorphous germanium thin films

Burmeister, F; Comedi, D; Chambouleyron, I (Elsevier Science SaLausanneSuíça, 2006)

1
2
3
4
. . .
127

Buscar

Filtros

A modification of close-space vapor transport combined with free evaporation technique for doping semiconductor films and production of interfaces

[en] CARBON DOPING IN INAIAS EPITAXIAL LAYERS[pt] DOPAGEM CARBONO EM CAMADAS EPITAXIAIS DE INALAS

[en] CARBON DOPING IN INAIAS EPITAXIAL LAYERS[pt] DOPAGEM CARBONO EM CAMADAS EPITAXIAIS DE INALAS

Impurity cluster effects in high- and low-doping semiconductor materials

Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells

Neutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactors

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

Neutron transmutation doping of silicon and others semiconductor materials

Contribuição para a sintese de diamante com dopagens de boro, nitrogenio ou enxofreStudy of diamond doping with boron, sulphur and nitrogen

Bismuth doping of hydrogenated amorphous germanium thin films