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Transiciones ópticas de excitones confinados en nanocristales semiconductores de GaSb/GaInAsSb/GaSb
(Universidad Autónoma de Occidente, 2013-01)
El libro presenta un estudio teórico sobre la energía del fotón asociada a transiciones ópticas de excitones confinados en nanocristales formados por heteroestructras semiconductoras de GaSb/GaInAsSb/GaSb. Además, se ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
Estudo das propriedades ópticas de filmes finos e poços quânticos de GaAsPN/GaPN
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2016-09-08)
Diluted nitride III-V semiconductor leagues have physical properties that make them
interesting for applications on optoelectronic devices. The possibility to lattice matching
GaAsPN with silicon makes this semiconductor ...
Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
(Elsevier B.V., 2004-05-01)
The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, ...
Effect of spin-polarized subbands in the inhomogeneous hole gas providing the indirect exchange in GaMnAs bilayers
(Elsevier B.V., 2004-05-01)
The magnetic order resulting from the indirect exchange in the metallic phase of a (Ga,Mn)As/GaAs double layer structure is studied via Monte Carlo simulation. The polarization of the hole gas is taken into account, ...
Propiedades ópticas- estructurales y morfológicas de aleaciones ternarias de Ga1-xAsMnx crecidas por Magnetrón Sputtering
(2010)
En este trabajo de tesis, se estudió el crecimiento por la técnica de R.F Magnetrón Sputtering de materiales semiconductores Ga1-xMnxAs, conocidos como semiconductores semimagnéticos o semiconductores magnéticos diluidos ...
Magnetic-field effects on shallow impurities in semiconductor GaAs-(Ga,Al)As quantum wells and superlattices within a fractional-dimensional space approach
(Elsevier Science BvAmsterdamHolanda, 2000)
Ohmic contacts with palladium diffusion barrier on III-V semiconductors
(2012-11-27)
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
(A V S AMER INST PHYSICS, 2010)
In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is ...
Magnetic-field effects in defect-controlled ferromagnetic Ga1-xMnxAs semiconductors
(Amer Inst PhysicsMelvilleEUA, 2003)