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GaN nano- and micro-spheres fabricated selectively on silicon
(Elsevier Science BvAmsterdamHolanda, 2007)
First-principle calculations of optical properties of wurtzite AlN and GaN
(2001)
The imaginary part of the dielectric function of wurtzite AlN and GaN has been calculated in the long wavelength limit, using two different first-principle electronic structure methods. The first method is a full-potential ...
Vertical stacks of InAs quantum wires in an InP matrix
(Elsevier Science BvAmsterdamHolanda, 2003)
Effective electronic masses in wurtzite and zinc-blende GaN and AlN
(2001)
The effective electron and hole masses are fundamental quantities of semiconductors, used in numerous analyses of experiments and theoretical investigations. We present calculations of the band structure near the band edges ...
Termination of hollow core nanopipes in GaN by an AlN interlayer
(Elsevier, 2019)
Linear optical response of zinc-blende and wurtzite III-N (III=B, Al, Ga, and In)
(2007)
We present calculated dielectric function ε(ω) and linear optical absorption α(ω) of the cubic and hexagonal structures of BN, AlN, GaN, and InN, employing an all-electron linearized augmented plane wave method within the ...
Structural, electronic and magnetic properties of Ti-doped polar and nonpolar GaN surfaces
(Journal of Crystal Growth, 2018)