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Impacto de falhas transientes em memórias SRAM em nanotecnologia
(Revista Eletrônica de Iniciação Científica em Computação, 2020)
SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
(Institute of Electrical and Electronics Engineers, 2018-08-01)
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations of commercial off-the-shelf static random access memories (SRAMs) manufactured in 130-, 90-, and ...
Reliability enhancement of nanometer-scale digital circuits
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2014)
Reliability enhancement of nanometer-scale digital circuits
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2014)
Evaluating Soft-Core RISC-V processor in SRAM-based FPGA under radiation effects
(2020)
Abstract— This article evaluates the RISC-V Rocket processor
embedded in a Commercial Off-The-Shelf (COTS) SRAM-based
field-programmable gate array (FPGA) under heavy-ionsinduced faults and emulation fault injection. We ...
Evaluating Soft-Core RISC-V processor in SRAM-based FPGA under radiation effects
(2020)
Abstract— This article evaluates the RISC-V Rocket processor
embedded in a Commercial Off-The-Shelf (COTS) SRAM-based
field-programmable gate array (FPGA) under heavy-ionsinduced faults and emulation fault injection. We ...