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Implementação de células de memória e simulações de Single Event Effects
(Universidade Federal de Santa MariaBrasilUFSMCentro de Tecnologia, 2010-12-09)
This project consists of a Computer Science Graduation Work from Federal University
of Santa Maria. In this project were studied techniques and tools for simulation of
Single Event Effects (SEE) - radiation effects on ...
A facility for the study of Single Event Effects in the TANDAR accelerator
(Elsevier, 2018-10)
Semiconductor devices used in space applications suffer degradation due to the space radiation environment, which affects their electric parameters, eventually reducing the in-orbit lifetime. This relatively slow behavior ...
Desenvolvimento de um sistema de emulação de Single Event Upsets em dispositivos COTS baseado na metodologia Code Emulating Upsets
(Universidade Federal de Minas GeraisUFMG, 2013-02-28)
This work presents a method and a tool that enable the emulation of the behavior of Single Event Upset faults in applications running on microcontrollers COTS installed in scientific satellites, which are designed to operate ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Continuous high-altitude measurements of cosmic ray neutrons and SEU/MCU at various locations: correlation and analyses based-on MUSCA SEP³
(Institute of Electrical and Electronics Engineers, 2013-08)
In this paper are described measurements at high-altitude of both radiation environment and effects. These measurements comprise cosmic ray neutrons and SBU/MCU on nanoscales devices. Results obtained at Pic-du-Midi, France, ...
SOI Stacked Transistors Tolerance to Single-Event Effects
(2019)
© 2001-2011 IEEE.This paper addresses a quantitative study of the reliability improvement of the stacked transistor structure. The susceptibility of integrated circuits to single-event effects caused by interaction with ...