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Exponential depletion of neutral dangling bonds density (D-0) by rare-earth doping in amorphous Si films
(ELSEVIER SCIENCE BVAMSTERDAM, 2013-08-02)
In this work we study the effect reduction in the density of dangling bond species D-0 states in rare-earth (RE) doped a-Si films as a function concentration for different RE-specimens. The films a-Si-1_(x) REx, RE=Y3+, ...
Exponential depletion of neutral dangling bonds density (D-0) by rare-earth doping in amorphous Si films
(ElsevierAmsterdam, 2012)
Red, green, and blue upconversion luminescence in ytterbium-sensitized praseodymium-doped lead-cadmium-germanate glass
(2004-08-17)
Blue, green, red, and near-infrared upconversion luminescence in the wavelength region of 480 - 740 nm in Pr3+/Yb3+-codoped lead-cadmium-germanate glass under 980 nm diode laser excitation, is presented. Upconversion ...
Red, green, and blue upconversion luminescence in ytterbium-sensitized praseodymium-doped lead-cadmium-germanate glass
(2004-08-17)
Blue, green, red, and near-infrared upconversion luminescence in the wavelength region of 480 - 740 nm in Pr3+/Yb3+-codoped lead-cadmium-germanate glass under 980 nm diode laser excitation, is presented. Upconversion ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...
Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties
(2013-02-15)
Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in ...