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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
(Institute of Electrical and Electronics Engineers, 2019-08)
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying ...
SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model
(Frontiers Media, 2021-09)
We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in ...
Multibit-RRAM readout circuits based on non-balanced inverters
(Elsevier, 2020-12)
The demand for electronic memories with increasing storage capabilities is always on the rise. Increasing the information density in the same silicon area is a desirable feature, making fast multilevel resistive switching ...
Retentivity of RRAM devices based on metal/YBCO interfaces
(Cambridge University Press, 2011-05)
The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation ...
Memristive behavior of the SnO2/TiO2 interface deposited by sol–gel
(2017-07-15)
A novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared ...
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
(American Institute of Physics, 2021-08)
The relevance of the intrinsic series resistance effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This resistance notably affects the conduction characteristic of resistive ...
Tuning the resistive switching properties of TiO2-x films
(American Institute of Physics, 2015-03)
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication ...
Estudo de comutação resistiva em filmes finos de Al2O3 e ZnO para aplicação em dispositivos de “memória resistiva de acesso aleatório” (RRAM) e interruptor eletrônico (IE)
(Pós-Graduação em FísicaUniversidade Federal de Sergipe, 2019)
Manganite-based three level memristive devices with self-healing capability
(Elsevier Science, 2016-08)
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/La1/3Ca2/3MnO3/n-Si devices is explored using different measurement protocols. We show that ...
Resistive switching in ferromagnetic La2/3Ca1/3MnO3 thin films
(Institute of Electrical and Electronics Engineers, 2013-07-23)
Ferromagnetic thin films of La_{2/3}Ca_{1/3}MnO_{3} manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates.We performed structural, magnetic, spectroscopic, and electrical ...