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Benchmark on computer simulation of radioactive nuclides production rate in lead target exposed to 660 MeV protons
(American Institute of Physics, 2014)
Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2012)
In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and analog parameters considering four different splits (unstrained, ...
The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
(2017-11-15)
The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight ...
The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
(Ieee, 2017-01-01)
the goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed ...
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
(Elsevier B.V., 2014-11-01)
In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced ...
Low temperature performance of proton irradiated strained SOI FinFET
(2017-06-29)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Low temperature performance of proton irradiated strained SOI FinFET
(Ieee, 2017-01-01)
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, ...
Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation
(2021-03-01)
In this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. ...