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Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
(Elsevier B.V., 2003-05-01)
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates ...
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
(Elsevier B.V., 2003-05-01)
The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates ...
Photoreflectance and time-resolved photoreflectance in delta-doped superlattices
(Amer Inst PhysicsWoodburyEUA, 1998)
STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
(Amer Inst PhysicsWoodbury, 1993)
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
(Elsevier Science BvAmsterdamHolanda, 2003)
EFFECT OF TEMPERATURE ON THE BUILT-IN ELECTRIC-FIELD IN GAAS/GAALAS - SI HETEROSTRUCTURES
(Academic Press LtdLondonInglaterra, 1991)
CONTINUOUS TO BOUND INTERBAND-TRANSITIONS IN DELTA-DOPED GAAS-LAYERS
(Academic Press LtdLondonInglaterra, 1990)
ON THE ORIGIN OF FRANZ-KELDYSH OSCILLATIONS IN ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
(Amer Inst PhysicsWoodbury, 1991)
INTERBAND-TRANSITIONS OF SI DELTA-DOPED LAYERS IN PARA-TYPE GAAS
(John Wiley & Sons IncNew York, 1990)