Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction ...

A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...

A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...

Dispositivos híbridos apresentam grande potencial para aplicação em sistemas fotovoltaicos, diodos emissores de luz e fotodetectores. Estruturas híbridas permitem combinar a versatilidade da estrutura química dos materiais ...

Cu-doped SnO2 thin films present application as a gas sensor in H2S atmosphere, since the conductivity of SnO2 is increased due to the transformation of Cu into Cu2−xS. Based on this mechanism, a p–n Cu2S/SnO2 heterojunction ...

The main purpose of this article is to study the mathematical modeling of PN semiconductor devices and the factors that can alter their operation, placing much emphasis on the steps that must be taken into account to obtain ...